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| 2SK3593-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Symbol VDS VDSX ID Ratings Unit V 150 V *5 120 A Continuous drain current 57 A 5.4 ** A Pulsed drain current ID(puls] 228 V Gate-source voltage VGS 30 A Non-repetitive Avalanche current IAS *2 57 mJ Maximum Avalanche Energy EAS *1 272.5 kV/s Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/s Peak Diode Recovery dV/dt dV/dt *3 5 W Max. power dissipation PD Ta=25C 2.4 ** Tc=25C 270 C Operating and storage Tch +150 -55 to +150 C temperature range Tstg ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) Ta=25C *1 L=123H, Vcc=48V, See to Avalanche Energy Graph *2 Tch <150C = *3 IF< -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C *4 VDS < 150V *5 VGS=-30V = = = = Foot Print Pattern Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=150V VGS=0V VDS=120V VGS=0V VGS=30V VDS=0V ID=20A VGS=10V ID=20A VDS=25V VDS=75V VGS=0V f=1MHz VCC=48V ID=20A VGS=10V RGS=10 VCC=75V ID=40A VGS=10V L=123H Tch=25C IF=40A VGS=0V Tch=25C IF=40A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C 10 31 26 1940 310 24 20 26 50 20 52 15 18 1.10 0.14 0.77 Min. 150 3.0 Typ. Max. 5.0 25 250 100 41 2910 465 36 30 39 75 30 78 22.5 27 1.65 Units V V A nA m S pF 13 ns nC 57 A V s C Thermalcharacteristics Symbol Test Conditions Rth(ch-c) channel to case Thermal resistance Rth(ch-a) channel to ambient Rth(ch-a) ** channel to ambient ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) Item Min. Typ. Max. 0.463 87.0 52.0 Units C/W C/W C/W 1 2SK3593-01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 300 5 Allowable Power Dissipation PD=f(Tc) Surface mounted on 1000mm2,t=1.6mm FR-4 PCB (Drain pad area : 500mm2) 250 4 200 3 PD [W] 150 PD [W] 0 25 50 75 100 125 150 2 100 50 1 0 0 0 25 50 75 100 125 150 Tc [C] Tc [C] 1000 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 160 20V 10V 800 120 IAS=23A 600 8V EAS [mJ] ID [A] 80 7.5V 7.0V 400 IAS=35A 200 IAS=57A 40 6.5V 6.0V VGS=5.5V 0 0 25 50 75 100 125 150 0 0 2 4 6 8 10 12 starting Tch [C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 100 Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 10 ID[A] 10 1 gfs [S] 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 1 10 100 VGS[V] ID [A] 2 2SK3593-01 FUJI POWER MOSFET Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 0.15 VGS= 5.5V 6.0V 0.12 100 90 6.5V 7.0V 80 7.5V 8V Drain-Source On-state Resistance RDS(on)=f(Tch):ID=20A,VGS=10V 0.09 RDS(on) [ m ] RDS(on) [ ] 70 60 50 40 30 typ. max. 10V 0.06 20V 0.03 20 10 0.00 0 40 80 120 160 0 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [C] Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A 7.0 6.5 6.0 5.5 5.0 max. 10 12 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=40A, Tch=25C VGS(th) [V] 4.5 VGS [V] 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. Vcc= 75V 8 6 4 2 0 0 20 40 60 80 Tch [C] Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 1 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 Ciss 10 0 10 C [nF] 10 -1 IF [A] 1 2 Coss Crss 10 -2 10 -1 10 0 10 1 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] 3 2SK3593-01 Typical Switching Characteristics vs. ID 10 3 FUJI POWER MOSFET t=f(ID):Vcc=48V, VGS=10V, RG=10 100 90 Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB Rth(ch-a) [C/W] 1 2 tf 10 2 80 70 60 50 40 td(off) t [ns] td(on) 1 10 tr 30 20 10 10 0 10 -1 10 0 0 0 1000 2000 3000 2 10 10 4000 5000 ID [A] Drain Pad Area [mm ] 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V Single Pulse Avalanche Current I AV [A] 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4 |
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